Calculation of Channeling Effects During Ion Implantation Using the Boltzmann Transport Equation
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Software
Link
http://xplorestaging.ieee.org/ielx5/43/28434/01270133.pdf?arnumber=1270133
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A computationally efficient simulator for three-dimensional Monte Carlo simulation of ion implantation into complex structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-12
2. Monte Carlo simulation of boron implantation into single-crystal silicon;IEEE Transactions on Electron Devices;1992-07
3. An analytical solution to predict the drive‐in ofN‐ andP‐well implants in high‐temperature process steps;Journal of Applied Physics;1989-06-15
4. Trends in ion implantation in silicon VLSI technology;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1987-01
5. Precise ion-implantation analysis including channeling effects;IEEE Transactions on Electron Devices;1986-09
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