Trends in ion implantation in silicon VLSI technology-Reference-Cited by-同舟云学术

Trends in ion implantation in silicon VLSI technology

Published:1987-01 Issue: Volume:19-20 Page:299-306
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Tokuyama Takashi

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference24 articles.

1. Proc. 4th Conf. Solid State Devices;Warabisako,1973

2. Proc. 10th Conf. Solid State Devices;Wada,1979

3. IEEE Int. Solid State Circuits Conference;Furuyama,1986

4. Symp. VLSI Technology;Kinugawa,1985

5. Extended Abstract of 17th Conf. Solid State Devices and Materials;Natsuaki,1895

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