High-Voltage capacitance measurement system for SiC power MOSFETs-Reference-Cited by-同舟云学术

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High-Voltage capacitance measurement system for SiC power MOSFETs

Published:2009-09 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE Energy Conversion Congress and Exposition
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Author:

Ralston P.,Duong T.H.,Nanying Yang ,Berning D.W.,Hood C.,Hefner A.R.,Meehan K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5305884/5315930/05316221.pdf?arnumber=5316221

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Accurate ZVS Analysis of a Full-Bridge T-Type Resonant Converter for a 20-kW Unfolding-Based AC-DC Topology;IEEE Open Journal of Power Electronics;2024

2. Investigation on Single and Split Output Gate Configurations Influence on the GaN-HEMTs Switching Behaviours;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

3. Accuracy Analysis of the LCR Meter-Based Method for C-V Characterization of a Capacitor;2023 IEEE Applied Power Electronics Conference and Exposition (APEC);2023-03-19

4. From the Measurement of C _OSS–V _DS Characteristic to the Estimation of the Channel Current in Medium Voltage SiC MOSFET Power Modules;IEEE Transactions on Instrumentation and Measurement;2023

5. Detection of Cross-Turn-On and Selection of Off Drive Voltage for an SiC Power Module;IEEE Transactions on Industrial Electronics;2017-11

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