Comparative Study of SiC MOSFET and JFET using an Active Gate Driver
Author:
Affiliation:
1. Vanderbilt University,Electrical & Computer Engineering,Nashville,TN,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9815576/9815558/09815779.pdf?arnumber=9815779
Reference12 articles.
1. Infineon Technologies AG, Coolsic™ 1200V SiC MOSFET Application Note,2018
2. Power electronics: Circuits, Devices & Applications;rashid,2018
3. A new active gate driver for improving the switching performance of SiC MOSFET
4. A Comparison of 1200 V Normally-OFF & Normally-on Vertical Trench SiC Power JFET Devices
5. Low loss and low noise gate driver for SiC-MOSFET with gate boost circuit
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1. Active Gate Driving of Cascoded SiC JFETs;2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2022-11-07
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