A new active gate driver for improving the switching performance of SiC MOSFET-Reference-Cited by-同舟云学术

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A new active gate driver for improving the switching performance of SiC MOSFET

Published:2017-03 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Paredes Alejandro,Ghorbani Hamidreza,Sala Vicent,Fernandez Efren,Romeral Luis

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7922447/7930596/07931208.pdf?arnumber=7931208

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Optimized Switching Strategy Based on Gate Drivers with Variable Voltage to Improve the Switching Performance of SiC MOSFET Modules;Energies;2023-08-15

2. High Bandwidth Active Gate Driver for Simultaneous Reduction of Switching Surge and Switching Loss of SiC-MOSFET;IEEJ Journal of Industry Applications;2023-05-01

3. Investigation Into Active Gate-Driving Timing Resolution and Complexity Requirements for a 1200 V 400 A Silicon Carbide Half Bridge Module;IEEE Open Journal of Power Electronics;2023

4. Active Gate Driving of Cascoded SiC JFETs;2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2022-11-07

5. Multiobjective optimisation of active gate drivers for fast-switching MOSFETs;2022 IEEE Energy Conversion Congress and Exposition (ECCE);2022-10-09

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