Affiliation:
1. Department of Electronic and Electrical Engineering, Faculty of Science and Engineering, Swansea University Bay Campus, Swansea SA1 8EN, UK
Abstract
This paper proposes an optimized switching strategy (OSS) based on a silicon carbide (SiC) MOSFET gate driver with variable voltage, which allows simultaneous variations in several different parameters to optimize the switching performance of semiconductor devices. As a relatively new device, the SiC MOSFET shines in the field of high power density and high-frequency switching; it has become a popular solution for electric vehicles and renewable energy conversion systems. However, the increase in voltage and current slope caused by high switching speeds inevitably increases the overshoot and oscillation in a circuit and can even generate additional losses. The principle of this new control strategy is to change the voltage and current in the turn-on and turn-off stages by changing the gate driver’s voltage. That is, we reduced the drive’s voltage after a certain time delay and maintained it for a period of time, thus directly controlling the slopes of di/dt and dv/dt. This study focused on the optimization of the SiC MOSFET by changing the time delay preceding the decrease in the voltage of the gate driver, analyzing and calculating the optimal time delay before the decrease in the voltage of the gate driver, and verifying the findings using LTspice simulation software. The simulated results were compared and analyzed with hard-switching strategies. The results showed that the proposed OSS can improve the switching performance of SiC MOSFETs.
Subject
Energy (miscellaneous),Energy Engineering and Power Technology,Renewable Energy, Sustainability and the Environment,Electrical and Electronic Engineering,Control and Optimization,Engineering (miscellaneous),Building and Construction
Reference29 articles.
1. SiC power MOSFETs performance, robustness and technology maturity;Castellazzi;Microelectron. Reliab.,2016
2. SiC versus Si Evaluation of Potentials for Performance Improvement of Inverter and DC-DC Converter Systems by SiC Power Semiconductors;Biela;IEEE Trans. Ind. Electron.,2011
3. An Experimental Investigation of the Tradeoff between Switching Losses and EMI Generation with Hard-Switched All-Si, Si-SiC, and All-SiC Device Combinations;Oswald;IEEE Trans. Power Electron.,2014
4. High Switching Performance of 1700-V, 50-A SiC Power MOSFET Over Si IGBT/BiMOSFET for Advanced Power Conversion Applications;Hazra;IEEE Trans. Power Electron.,2016
5. Chen, H., and Divan, D. (2015, January 20–24). High speed switching issues of high power rated silicon-carbide devices and the mitigation methods. Proceedings of the IEEE Energy Conversion Congress and Exposition (ECCE), Montreal, QC, Canada.
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