Author:
Nayak Suvendu,Lodha Saurabh,Ganguly Swaroop
Cited by
7 articles.
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1. Fully/partially suspended gate SiC-based FET for power circuit applications;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03
2. Non-isothermal simulation of SiC DMOSFET short circuit capability;Japanese Journal of Applied Physics;2022-05-24
3. Effect of interface traps on SiC-based power D-MOSFET transient behaviour;2021 International Semiconductor Conference (CAS);2021-10-06
4. Hybrid gate dielectric with Si3N4 stressor for LDMOSFET;2021 IEEE Latin America Electron Devices Conference (LAEDC);2021-04-19
5. Fully/partially suspended gate SiC-based FET for power applications;2021 IEEE Latin America Electron Devices Conference (LAEDC);2021-04-19