Short-Channel Effects in Independent-Gate FinFETs

Author:

Lu Zhichao,Fossum Jerry G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

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2. Quality factor and digital inverter performance in gate underlap and overlap DMG FinFETs;Materials Science and Engineering: B;2024-01

3. Determination of Channel Parameters of FinFET using Artificial Neural Networks in Current Mirror Applications;2023 14th International Conference on Electrical and Electronics Engineering (ELECO);2023-11-30

4. Optimized Speed and Power Consumption in a 14T SRAM Bit Cell by Use of Shorted-Gate FinFET;2023 3rd International Conference on Advancement in Electronics & Communication Engineering (AECE);2023-11-23

5. Estimating ID Current of 32nm FinFET by Artificial Neural Networks;2023 International Conference on Sustainable Computing and Smart Systems (ICSCSS);2023-06-14

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