Performance Assessment of a New Radiation Dosimeter Based on Carbon Nanotube Field-Effect Transistor: A Quantum Simulation Study
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation
Link
http://xplorestaging.ieee.org/ielx7/7361/8681667/08625519.pdf?arnumber=8625519
Cited by 33 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Performance Projection of Vacuum Gate Dielectric Doping-Free Carbon Nanoribbon/Nanotube Field-Effect Transistors for Radiation-Immune Nanoelectronics;Nanomaterials;2024-06-01
2. Dielectric-Modulated Junctionless Carbon Nanotube Field-Effect Transistor as a Label-Free DNA Nanosensor: Achieving Ultrahigh Sensitivity in the Band-to-Band Tunneling Regime;IEEE Sensors Journal;2024-02-01
3. Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection;Nanomaterials;2024-01-19
4. Asymmetric Dual-Gate Junctionless GNR Tunnel FET as a High-Performance Photosensor With an Electrostatically Improved Photosensitivity: A Quantum Simulation Study;IEEE Sensors Journal;2023-11-15
5. Performance Assessment of a New Radiation Microsensor Based 4H-SiC trench MOSFET: A Simulation Study;Silicon;2022-09-05
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