InGaN/GaN Multiquantum-Well Metal-Semiconductor-Metal Photodetectors With Beta-${\rm Ga}_{2}{\rm O}

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InGaN/GaN Multiquantum-Well Metal-Semiconductor-Metal Photodetectors With Beta-${\rm Ga}_{2}{\rm O}_{3}$ Cap Layers

Published:2013-04 Issue:4 Volume:13 Page:1187-1191
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Huang Zheng-Da,Weng Wen-Yin,Chang Shoou-Jinn,Hua Yuan-Fu,Chiu Chiu-Jung,Hsueh Ting-Jen,Wu San-Lein

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx5/7361/6451196/06361447.pdf?arnumber=6361447

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