A Study on Epitaxial Lift-Off in InGaP/GaAs Double-Junction Solar Cells via Au-Au Bonding on Pre-Patterned Area-Reference-Cited by-同舟云学术

A Study on Epitaxial Lift-Off in InGaP/GaAs Double-Junction Solar Cells via Au-Au Bonding on Pre-Patterned Area

Published:2022-06 Issue:3 Volume:14 Page:1-5
ISSN:1943-0655
Container-title:IEEE Photonics Journal
language:
Short-container-title:IEEE Photonics J.

Author:

Park Gwang yeol¹^ORCID,Kim Chea won¹^ORCID,Kim Hyo jin¹^ORCID

Affiliation:

1. Optoelectric Convergence Research Center, Korea Photonics Technology Institute, Gwangju, Korea

Funder

National Research Foundation

Ministry of Science ICT

Ministry of Science

Ministry of Trade, Industry & Energy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/4563994/9758988/09756894.pdf?arnumber=9756894

Reference18 articles.

1. High separation rate of epitaxial lift-off using hydrophilic solvent for III-V solar cell and reusable applications;horng;Proc IEEE 42nd Photovolt Specialist Conf,2015

2. Thin-Film III–V Solar Cells Using Epitaxial Lift-Off

3. Reuse of GaAs substrates for epitaxial lift-off by employing protection layers

4. Wafer reuse for repeated growth of III-V solar cells

5. Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications

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