Optimal ON-resistance versus breakdown voltage tradeoff in superjunction power devices: a novel analytical model
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/20433/00944211.pdf?arnumber=944211
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3. Performance Limit and Design Guideline of 4H-SiC Superjunction Devices Considering Anisotropy of Impact Ionization;IEEE Electron Device Letters;2022-12
4. Analytical Model and Mechanism of a Linear Extended Gate for Lateral Internal Superjunction Power Devices;Silicon;2022-05-25
5. Optimization and Comparison of Specific ON-Resistance for Superjunction MOSFETs Considering Three-Dimensional and Insulator-Pillar Concepts;IEEE Transactions on Electron Devices;2022-03
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