Performance Limit and Design Guideline of 4H-SiC Superjunction Devices Considering Anisotropy of Impact Ionization-Reference-Cited by-同舟云学术

Performance Limit and Design Guideline of 4H-SiC Superjunction Devices Considering Anisotropy of Impact Ionization

Published:2022-12 Issue:12 Volume:43 Page:2025-2028
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wang Changwang¹,Li Xuan¹^ORCID,Li Lingfeng¹^ORCID,Deng Xiaochuan¹^ORCID,Zhang Wentong¹^ORCID,Zheng Liu²,Zou Yansheng³,Qian Weining⁴,Li Zhaoji¹,Zhang Bo¹^ORCID

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China

2. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

3. CSG EHV Power Transmission Company Maintenance Test Center, Guangzhou, China

4. EpiWorld International Company Ltd., Xiamen, China

Funder

National Natural Science Foundation of China

Sichuan Science and Technology Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9965979/09913365.pdf?arnumber=9913365

Reference19 articles.

1. True Material Limit of Power Devices—Applied to 2-D Superjunction MOSFET

2. Impact ionization coefficients of 4H silicon carbide

3. Optimal ON-resistance versus breakdown voltage tradeoff in superjunction power devices: a novel analytical model

4. Optimization and Comparison of Drift Region Specific ON-Resistance for Vertical Power Hk MOSFETs and SJ MOSFETs With Identical Aspect Ratio

5. SiC material properties

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1. The Minimum Specific On-Resistance of 4H-SiC Superjunction Devices;IEEE Transactions on Electron Devices;2024

2. Charge Imbalance Tolerance of 4H-SiC Superjunction Devices Featuring Breakdown Path Variation;IEEE Electron Device Letters;2023-07