On 1/f trapping noise in MOSTs
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/2071/00057173.pdf?arnumber=57173
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. References;Compact Models for Integrated Circuit Design;2015-08-14
2. What Do We Certainly Know About $\hbox{1}/f$ Noise in MOSTs?;IEEE Transactions on Electron Devices;2008-11
3. Impact of technology scaling on the 1∕f noise of thin and thick gate oxide deep submicron NMOS transistors;IEE Proceedings - Circuits, Devices and Systems;2004
4. Characteristic potential method of noise calculation in semiconductor devices: calculation of 1/f noise in MOS transistors in the ohmic region;SPIE Proceedings;2003-05-12
5. MOSFET 1∕f noise model based on mobility fluctuation in linear region;Electronics Letters;2002
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