Impurity-related limitations of next-generation industrial silicon solar cells-Reference-Cited by-同舟云学术

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Impurity-related limitations of next-generation industrial silicon solar cells

Published:2012-06 Issue: Volume: Page:
ISSN:
Container-title:2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2
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Author:

Schmidt Jan,Lim Bianca,Walter Dominic,Bothe Karsten,Gatz Sebastian,Dullweber Thorsten,Altermatt Pietro P.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6621207/6656697/06656779.pdf?arnumber=6656779

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Coating Properties on the Crystal Quality Near the Sidewalls of Multicrystalline Silicon Ingot;Silicon;2023-03-30

2. Closing the gap between n‐ and p‐type silicon heterojunction solar cells: 24.47% efficiency on lightly doped Ga wafers;Progress in Photovoltaics: Research and Applications;2022-10-21

3. Deep Learning Extraction of the Temperature-Dependent Parameters of Bulk Defects;ACS Applied Materials & Interfaces;2022-10-19

4. Investigating the link between LeTID and hydrogen induced contact resistance in PERC devices;SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics;2022

5. Impact of silicon melt infiltration on the quality of cast crystalline silicon;Solar Energy;2021-09

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