Closing the gap between n‐ and p‐type silicon heterojunction solar cells: 24.47% efficiency on lightly doped Ga wafers-Reference-Cited by-同舟云学术

Closing the gap between n‐ and p‐type silicon heterojunction solar cells: 24.47% efficiency on lightly doped Ga wafers

Published:2022-10-21 Issue: Volume: Page:
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Progress in Photovoltaics

Author:

Danel Adrien¹^ORCID,Chaugier Nicolas¹,Veirman Jordi¹,Varache Renaud¹,Albaric Mickael¹,Pihan Etienne¹

Affiliation:

1. Université Grenoble Alpes, CEA, Liten, Campus INES Le Bourget du Lac France

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pip.3635

Reference24 articles.

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2. WangYC.Mono wafer requirements for advanced heterojunction cells. Presented at nPV workshop Lausanne Switzerland March2018.

3. Silicon wafers for industrial n-type SHJ solar cells: Bulk quality requirements, large-scale availability and guidelines for future developments

4. Review of light-induced degradation in crystalline silicon solar cells

5. ChenD WeigandW WrightM et al.Evaluating the impact of and solution to light‐induced degradation in silicon heterojunction solar cells. In 2019 IEEE 46thPVSC Chicago IL USA June2019;1099–1103. doi:10.1109/PVSC40753.2019.8980779

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