N-channel versus p-channel flash EEPROM-which one has better reliabilities-Reference-Cited by-同舟云学术

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N-channel versus p-channel flash EEPROM-which one has better reliabilities

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Container-title:2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167)
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Author:

Chung S.S.,Liaw S.T.,Yih C.M.,Ho Z.H.,Lin C.J.,Kuo D.S.,Liang M.S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7356/19955/00922884.pdf?arnumber=922884

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Endurance degradation and lifetime model of p-channel floating gate flash memory device with 2T structure;Solid-State Electronics;2017-08

2. The tunnelling and electron injection reliabilities for FG transistors;Microelectronics International;2014-04-29

3. Advantage of Floating Gate B4-Flash over Retention Reliability after Cycling - Characterization by Variation of Transconductance;2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design;2008-05

4. Highly Reliable 90-nm Logic Multitime Programmable NVM Cells Using Novel Work-Function-Engineered Tunneling Devices;IEEE Transactions on Electron Devices;2007-09

5. Reliability of a 90nm Embedded Multi-time Programmable Logic NVM Cells Using Work-function Engineered Tunneling Device;2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual;2007-04

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