Millimeter-wave ion-implanted graded In/sub x/Ga/sub 1-x/As MESFETs grown by MOCVD-Reference-Cited by-同舟云学术

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Millimeter-wave ion-implanted graded In/sub x/Ga/sub 1-x/As MESFETs grown by MOCVD

Published:1989-10 Issue:10 Volume:10 Page:449-451
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wang G.W.,Feng M.,Kaliski R.,Liaw Y.P.,Lau C.,Ito C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/1649/00043096.pdf?arnumber=43096

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion-implanted In/sub (x)/Ga/sub (1-x)/As MESFET's on GaAs substrate for low-cost millimeter-wave IC application;IEEE Transactions on Electron Devices;1992-03

2. Characterization of ion‐implanted InxGa1−xAs/GaAs 0.25 μm gate metal semiconductor field‐effect transistors withFt≳100 GHz;Applied Physics Letters;1991-06-10

3. 60-GHz noise performance of ion-implanted In/sub x/Ga/sub 1-x/As MESFET's;IEEE Electron Device Letters;1991-05

4. Does the two‐dimensional electron gas effect contribute to high‐frequency and high‐speed performance of field‐effect transistors?;Applied Physics Letters;1990-09-17

5. Misfit In0.18Ga0.82As/GaAs metal‐semiconductor field‐effect transistors with improved Schottky gate characteristics;Applied Physics Letters;1990-05-14

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