Characterization of ion‐implanted InxGa1−xAs/GaAs 0.25 μm gate metal semiconductor field‐effect transistors withFt≳100 GHz
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104809
Reference7 articles.
1. High-performance In/sub 0.08/Ga/sub 0.92/As MESFETs on GaAs
2. Ion‐implanted In0.1Ga0.9As metal‐semiconductor field‐effect transistors on GaAs (100) substrates
3. Millimeter-wave ion-implanted graded In/sub x/Ga/sub 1-x/As MESFETs grown by MOCVD
4. A high-gain, low-noise 1/2- mu m pulse-doped pseudomorphic HEMT
5. 0.2- mu m gate-length atomic-planar doped pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.25/Ga/sub 0.75/As MODFETs with f/sub T/ over 120 GHz
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural, Electronic, and Optical Properties of InxGa1-xAs Alloys by Full Potential Linear Augmented Plane Wave Method;Japanese Journal of Applied Physics;2008-07-11
2. The engineering research center for compound semiconductor microelectronics;Proceedings of the IEEE;1993-01
3. Temperature dependence of high-frequency performance of AlGaAs/InGaAs pseudomorphic HEMT's;IEEE Electron Device Letters;1992-01
4. Reduced lattice temperature high‐speed operation of pseudomorphic InGaAs/GaAs field‐effect transistors;Applied Physics Letters;1991-11-04
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