Flexible Microcrystalline Silicon Source-Gated Transistors with Negliglible DC Performace Degradation at 2.5 mm Bending Radius-Reference-Cited by-同舟云学术

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Flexible Microcrystalline Silicon Source-Gated Transistors with Negliglible DC Performace Degradation at 2.5 mm Bending Radius

Published:2022-07-10 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)
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Author:

Bestelink Eva¹,Fustec Jean-Charles²,Sagazan Olivier de²,Teng Hao-Jing¹,Sporea Radu A.¹

Affiliation:

1. University of Surrey, Advanced Technology Institute,Guildford,Surrey,United Kingdom

2. University of Rennes, IETR-DMM-UMR6164,Rennes,Brittany,France

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9781476/9781477/09781587.pdf?arnumber=9781587

Reference28 articles.

1. Enabling thin-film transistor technologies and the device metrics that matter

2. Key Issues With Printed Flexible Thin Film Transistors and Their Application in Disposable RF Sensors

3. Source-gated thin-film transistors

4. Micron-scale inkjet-assisted digital lithography for large-area flexible electronics

5. Stable transistors in hydrogenated amorphous silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-Ga-Zn-O Source-Gated Transistors with 3nm SiO₂ Tunnel Layer on a Flexible Polyimide Substrate;2023 IEEE International Flexible Electronics Technology Conference (IFETC);2023-08-13

2. Direct Printed Flexible Organic Thin-Film Transistors With Cross-Linked PVA-Carrageenan Gate Dielectric;IEEE Sensors Letters;2023-05

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