Increasing the Post Halo Implantation Anneal Temperature for the Effective Improvement of Threshold Voltage Roll-off Induced by the Unique Non-uniform Boron Diffusion from the Embedded Source/Drain-Reference-Cited by-同舟云学术

Increasing the Post Halo Implantation Anneal Temperature for the Effective Improvement of Threshold Voltage Roll-off Induced by the Unique Non-uniform Boron Diffusion from the Embedded Source/Drain

Published:2022-06-20 Issue: Volume: Page:
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Container-title:2022 China Semiconductor Technology International Conference (CSTIC)
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Author:

Li Run-Ling¹,Jiang Yu-Long¹

Affiliation:

1. School of Microelectronics, Fudan University,State Key Laboratory of ASIC and System,Shanghai,China,200433

Funder

Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9856647/9856709/09856856.pdf?arnumber=9856856

Reference13 articles.

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4. Low temperature growth kinetics of high Ge content SiGe in reduced pressure-chemical vapor deposition

5. Design and Characteristics of the Lightly Doped Drain-Source (LDD) Insulated Gate Field-Effect Transistor

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