SNC SADP Spacer etch process development using carbon hard mask mandrel for sub advanced process DRAM-Reference-Cited by-同舟云学术

SNC SADP Spacer etch process development using carbon hard mask mandrel for sub advanced process DRAM

Published:2022-06-20 Issue: Volume: Page:
ISSN:
Container-title:2022 China Semiconductor Technology International Conference (CSTIC)
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Author:

Liu Hao¹,Zhang Jian-kun¹,Zhao Zun-hua¹,Xu Li-Tian¹,Chen Chen¹,Chen Yang²,Han Xin-Ru²,Zhang Shi-Ran²,Ma Jing-Lun²,Lin Bing-Hui²,Huang Xin-Wen²,Chen Ying-Yi²,Su Xian-Wen²

Affiliation:

1. Beijing NAURA Microelectronics Equipment Co. Ltd,Beijing City,China

2. ChangXin Memory Technologies, Inc. Ltd,Hefei City,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9856647/9856709/09856784.pdf?arnumber=9856784

Reference7 articles.

1. Challenges and mitigation strategies for resist trim etch in resist-mandrel based SAQP integration scheme;mohanty;Proc of SPIE,0

2. SAQP Pitch Walking Improvement Path Finding by Simulation;yang;2019 International Symposium on Dry Process (DPS),0

3. Self-aligned Quadruple Patterning Integration using spacer on spacer pitch splitting at the resist level for sub 32nm pitch applications;raley;Proc of SPIE,0

4. Optimization of the CD uniformity (CDU) in silicon oxide spacer process for 5nm FIN SAQP process flow;wu;2020 China Semiconductor Technology International Conference (CSTIC),0

5. Self-aligned quadruple patterning to meet requirements for fins with high density

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