Transient Current Analysis of Silicon Carbide Neutron Detector Using SRIM and TCAD-Reference-Cited by-同舟云学术

Transient Current Analysis of Silicon Carbide Neutron Detector Using SRIM and TCAD

Author:

Zhang Lilong¹^ORCID,Wang Ying¹^ORCID,Guo Haomin¹,Yu Chenghao¹^ORCID,Hu Haifan²,Liu Yuntao³,Chen Size⁴

Affiliation:

1. School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China

2. X Laboratory, Second Institute of China, Aerospace Science and Technology Corporation, Beijing, China

3. College of Information and Communication Engineering, Harbin Engineering University, Harbin, China

4. Institute of Nuclear Energy Safety Technology, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, China

Funder

National Research and Development Program for Major Research Instruments of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

Reference39 articles.

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