Normally-Off SiC VJFETs for 800 V and 1200 V Power Switching Applications-Reference-Cited by-同舟云学术

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Normally-Off SiC VJFETs for 800 V and 1200 V Power Switching Applications

Published:2008-05 Issue: Volume: Page:
ISSN:
Container-title:2008 20th International Symposium on Power Semiconductor Devices and IC's
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Author:

Sankin I.,Sheridan D.C.,Draper W.,Bondarenko V.,Kelley R.,Mazzola M.S.,Casady J.B.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4534810/4538873/04538948.pdf?arnumber=4538948

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature;Materials Science Forum;2015-06

2. Static and switching characteristics of 3.3 kV double channel-doped SiC vertical junction field effect transistor in cascode configuration;Japanese Journal of Applied Physics;2015-03-24

3. Silicon Carbide Junction Field-Effect Transistors (SiC JFETs);Wiley Encyclopedia of Electrical and Electronics Engineering;2014-12-15

4. SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices;Materials Science Forum;2014-02

5. 6H-SiC Based Power VJFET and Its Temperature Dependence;Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering;2013

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