Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature-Reference-Cited by-同舟云学术

Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature

Published:2015-06 Issue: Volume:821-823 Page:814-817
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Chailloux Thibaut¹,Calvez Cyril¹,Tournier Dominique¹,Planson Dominique¹

Affiliation:

1. Laboratoire Ampère, INSA de Lyon

Abstract

The aim of this study consists in comparing effects of temperature on various Silicon Carbide power devices. Static and dynamic electrical characteristics have been measured for temperatures from 80K to 525K.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.821-823.814.pdf

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