A High Current 3300V Module Employing Reverse Conducting IGBTs Setting a New Benchmark in Output Power Capability-Reference-Cited by-同舟云学术

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A High Current 3300V Module Employing Reverse Conducting IGBTs Setting a New Benchmark in Output Power Capability

Published:2008-05 Issue: Volume: Page:
ISSN:
Container-title:2008 20th International Symposium on Power Semiconductor Devices and IC's
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Author:

Rahimo M.,Schlapbach U.,Kopta A.,Vobecky J.,Schneider D.,Baschnagel A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4534810/4538873/04538899.pdf?arnumber=4538899

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 16kV 4H-SiC Reverse-Conducting IGBT With a Collector-Side Injection-Enhanced Structure for Low Reverse-Conducting Voltage;IEEE Electron Device Letters;2024-06

2. Design of a high blocking voltage RC-IGBT with suppressed Snapback;2024 4th International Conference on Electronics, Circuits and Information Engineering (ECIE);2024-05-24

3. Active trench barrier RC-IGBT with pinch-off and carrier accumulation effects;Journal of Power Electronics;2024-02-27

4. Novel Low-Loss Reverse-Conducting Insulated-Gate Bipolar Transitor with Collector-Side Injection-Enhanced Structure;Electronics;2023-12-20

5. Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices;Micromachines;2023-10-31

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