Long term high temperature reverse bias (HTRB) test on high voltage SiC-JBS-diodes-Reference-Cited by-同舟云学术

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Long term high temperature reverse bias (HTRB) test on high voltage SiC-JBS-diodes

Published:2018-05 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Hoffmann Felix,Mihaila Andrei,Kranz Lukas,Godignon Philippe,Kaminski Nando

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8387225/8393579/08393696.pdf?arnumber=8393696

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on High Voltage Reverse Bias (HTRB) Test Method of 6.5 kV High-Voltage IGBT Modules for Railway;IEEE Transactions on Power Electronics;2024-11

2. Novel design and modelling of SiC junction barrier Schottky diode with improved Baliga FOM under high-temperature applications;Microelectronics Journal;2024-09

3. Analysis of Effects of Defects on Degradation Mechanism of 1200-V/40-A 4H-SiC Junction Barrier Schottky Diodes Induced by High-Reserve Bias Stress;IEEE Transactions on Electron Devices;2024-05

4. Mitigating Voltage Imbalance Across Series-Connected 10 kV SiC JBS Diodes in a Medium-Voltage High-Power 3L-NPC Converter;IEEE Transactions on Power Electronics;2024-03

5. Design and H3TRB Test on 650V SiC-JBS Diodes;2023 24th International Conference on Electronic Packaging Technology (ICEPT);2023-08-08

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