Analysis of parameters determining nominal dynamic performance of 1.2 kV SiC power MOSFETs-Reference-Cited by-同舟云学术

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Analysis of parameters determining nominal dynamic performance of 1.2 kV SiC power MOSFETs

Published:2018-05 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Stark Roger,Kovacevic-Badstubner Ivana,Tsibizov Alexander,Kakarla Bhagyalakshmi,Ju Yanrui,Jaeger Beat,Ziemann Thomas,Grossner Ulrike

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8387225/8393579/08393689.pdf?arnumber=8393689

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate Capacitance Characterization of Silicon Carbide and Silicon Power mosfets Revisited;IEEE Transactions on Power Electronics;2022-09

2. Temperature Dependence of On-State Inter-Terminal Capacitances (C<sub>gd</sub> and C<sub>gs</sub>) of SiC MOSFETs and Frequency Limitations of their Measurements;Materials Science Forum;2022-05-31

3. Accuracy of Three Interterminal Capacitance Models for SiC Power MOSFETs Under Fast Switching;IEEE Transactions on Power Electronics;2021-08

4. Influence of Process Variations on the Electrical Performance of SiC Power MOSFETs;IEEE Transactions on Electron Devices;2021-01

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