High Performance GaN-on-Si Power Devices with Ultralow Specific On-resistance Using Novel Strain Method Fabricated on 200 mm CMOS-Compatible Process Platform-Reference-Cited by-同舟云学术

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High Performance GaN-on-Si Power Devices with Ultralow Specific On-resistance Using Novel Strain Method Fabricated on 200 mm CMOS-Compatible Process Platform

Published:2019-05 Issue: Volume: Page:
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Container-title:2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Wong Roy K.-Y.,Chiu H. C.,Zhang J. H.,Zhou C.,Zhao Thomas,Wu Y. B.,Liao Henry,He Simon,Zhang A. B.,Zou Y.B.,Li Seiya,Zhang Martin,Wu Macro,Lee John,Chen P.W.,Xie Andy,Zhang Jeff

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8746072/8757559/08757694.pdf?arnumber=8757694

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigating Forward Gate ESD Mechanism of Schottky-Type p-GaN Gate HEMTs Using a SiC-Based High-Speed Pulsed I-V Test System;IEEE Electron Device Letters;2024-07

2. Charge compensation impact on the access region resistance in AlGaN/GaN devices;Micro and Nanostructures;2023-04

3. 660-V/1.99-m$\Omega $.cm$^{\text{2}}$ Low-Current-Collapse p-GaN/AlGaN/GaN HEMTs With Selective Regrowth AlN/AlGaN Strain Layers;IEEE Transactions on Electron Devices;2023

4. RF Enhancement-Mode p-GaN Gate HEMT on 200 mm-Si Substrates;IEEE Electron Device Letters;2023-01

5. Evaluation of Reliability and Lifetime of 650-V GaN-on-Si Power Devices Fabricated on 200-mm CMOS-Compatible Process Platform for High-Density Power Converter Application;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22

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