RF Enhancement-Mode p-GaN Gate HEMT on 200 mm-Si Substrates
Author:
Affiliation:
1. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Sai Kung, Hong Kong
Funder
Key-Area Research and Development Program of Guangdong Province
Hong Kong Innovation and Technology Fund
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10001839/09941147.pdf?arnumber=9941147
Reference13 articles.
1. RF Performance
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4. GaN HEMT With Convergent Channel for Low Intrinsic Knee Voltage
5. GaN-on-Si mm-wave RF devices integrated in a 200 mm CMOS compatible 3-level Cu BEOL;parvais;IEDM Tech Dig,2020
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