High-Performance InP-Based Bias-Tunable Near-Infrared/Extended-Short Wave Infrared Dual-Band Photodetectors-Reference-Cited by-同舟云学术

High-Performance InP-Based Bias-Tunable Near-Infrared/Extended-Short Wave Infrared Dual-Band Photodetectors

Published:2022-08-01 Issue:15 Volume:40 Page:5157-5162
ISSN:0733-8724
Container-title:Journal of Lightwave Technology
language:
Short-container-title:J. Lightwave Technol.

Author:

Wang Zongti¹,Huang Jian¹^ORCID,Zhu Liqi¹^ORCID,Zhou Zhiqi¹,Zhao Xuyi²^ORCID,Du Antian²,Yu Wenfu²,Liu Ruotao²,Gong Qian²,Chen Baile¹^ORCID

Affiliation:

1. School of Information Science and Technology, ShanghaiTech University, Shanghai, China

2. Key Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/50/9839676/09765660.pdf?arnumber=9765660

Reference34 articles.

1. Infrared spectroscopy of acetone–water liquid mixtures. II. Molecular model

2. InP-Based Extended-Short Wave Infrared Heterojunction Phototransistor

3. Optically-aligned visible/near-infrared dual-band photodetector materials and devices on GaAs using metamorphic epitaxy

4. Reduction of surface leakage current in InAs/GaSb strained layer long wavelength superlattice detectors using SU-8 passivation

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