Uniform and High-Power Characteristics of AlGaInP-Based Laser Diodes With 4-Inch-Wafer Process Technology-Reference-Cited by-同舟云学术

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Uniform and High-Power Characteristics of AlGaInP-Based Laser Diodes With 4-Inch-Wafer Process Technology

Published:2007 Issue:5 Volume:13 Page:1170-1175
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Sumitomo Hiroyuki,Kajiyama Satoshi,Oguri Hiroyuki,Sakashita Takeshi,Yamamoto Toru,Nakao Kensei,Domoto Shinichi,Ueda Makoto,Amano Hidenori,Satoyoshi Hirotada,Kita Toshihiro,Izumi Shigekazu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/2944/4346455/04346520.pdf?arnumber=4346520

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