Fabrication of Highly Reliable Watt-Level 660 nm Semiconductor Lasers
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Published:2018
Issue:5
Volume:45
Page:0501002
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ISSN:0258-7025
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Container-title:Chinese Journal of Lasers
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language:en
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Short-container-title:中国激光
Author:
Zhu Zhen 朱振,Zhang Xin 张新,Xiao Chengfeng 肖成峰,Li Peixu 李沛旭,Sun Sujuan 孙素娟,Xia Wei 夏伟,Xu Xiangang 徐现刚
Publisher
Shanghai Institute of Optics and Fine Mechanics
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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1. Ge/SixGe1-x衬底620 nm半导体激光器的特性;Laser & Optoelectronics Progress;2022