Impact of the Oxide Aperture Width on the Degradation of 845 Nm VCSELs for Silicon Photonics-Reference-Cited by-同舟云学术

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Impact of the Oxide Aperture Width on the Degradation of 845 Nm VCSELs for Silicon Photonics

Published:2025-03 Issue:2: Pwr. and Effic. Scaling in Volume:31 Page:1-9
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Zenari Michele¹^ORCID,Buffolo Matteo¹^ORCID,Rampazzo Fabiana¹,De Santi Carlo¹^ORCID,Rossi Francesca²^ORCID,Lazzarini Laura²,Goyvaerts Jeroen³,Grabowski Alexander⁴^ORCID,Gustavsson Johan S.⁴,Baets Roel⁵^ORCID,Larsson Anders⁴^ORCID,Roelkens Günther⁵^ORCID,Meneghesso Gaudenzio¹^ORCID,Zanoni Enrico¹^ORCID,Meneghini Matteo¹^ORCID

Affiliation:

1. Department of Information Engineering, University of Padova, Padova, Italy

2. IMEM, CNR Parma, Parma, Italy

3. LIGENTEC SA, EPFL Innovation Park Bâtiment L, Ecublens, Switzerland

4. Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, Sweden

5. Photonics Research Group, Ghent University-imec, Gent, Belgium

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/2944/10663302/10561476.pdf?arnumber=10561476

Reference14 articles.

1. Review of Silicon Photonics Technology and Platform Development

2. Silicon Mach-Zehnder modulator of extinction ratio beyond 10 dB at 100-125 Gbps

3. Silicon Photonics Sensors for Biophotonic Applications—A Review

4. A large-scale microelectromechanical-systems-based silicon photonics LiDAR

5. Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

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