Affiliation:
1. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Youth Innovation Promotion Association of the Chinese Academy of Sciences
Strategic Priority Research Program of Chinese Academy of Sciences
Shanghai Rising-Star Program
Science and Technology Commission of Shanghai Municipality
Natural Science Foundation of Zhejiang Province
Shanghai Municipal Science and Technology Major Project
Center for Micro and Nanoscale Research and Fabrication
University of Science and Technology of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics
Reference49 articles.
1. The anderson transition;mott;Proc Roy Soc A Math Phys Eng Sci,1975
2. Absence of Diffusion in Certain Random Lattices
3. Zener Tunneling and Photoresponse of a WS2/Si van der Waals Heterojunction
4. Tunneling Current in 4H-SiC p-n Junction Diodes
5. Observation of abrupt metallic transitions in p-type GaAs devices and comparison with avalanche breakdown in the InGaAs APD;youn;Journal of the Korea Physical Society,2005
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