Edge Termination Design with Strong Process Robustness for 1.2 kV-class 4H-SiC Super Junction V-groove MOSFETs
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9163811/9170028/09170032.pdf?arnumber=9170032
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. 3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance;IEEE Transactions on Electron Devices;2024-09
2. The Minimum Specific On-Resistance of 4H-SiC Superjunction Devices;IEEE Transactions on Electron Devices;2024
3. Comparison of electronic stopping cross sections for channeled implantation of Al ions between the 〈0001〉 and 〈11 2¯ 3〉 directions in 4H-SiC;Japanese Journal of Applied Physics;2024-01-01
4. Re-evaluation of energy dependence of electronic stopping cross-section for Al ions into 4H-SiC (0001);Japanese Journal of Applied Physics;2022-11-01
5. Novel High-Tolerance Termination With Resistive Field Plate for 600 V Super-Junction Vertical Double-Diffused MOSFET;IEEE Electron Device Letters;2022-07
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