Carrier distribution, spontaneous emission and gain engineering in lasers with nonidentical quantum wells-Reference-Cited by-同舟云学术

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Carrier distribution, spontaneous emission and gain engineering in lasers with nonidentical quantum wells

Published:1999 Issue:3 Volume:5 Page:620-626
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Newell T.C.,Wright M.W.,Hou H.,Lester L.F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/2944/17082/00788426.pdf?arnumber=788426

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of the Active Region and Waveguide Design on the Performance of Edge-Emitting Lasers Based on InGaAs/GaAs Quantum Well-Dots;Semiconductors;2021-03

2. High-power quantum-dot superluminescent tapered diode under CW operation;Optics Express;2019-04-04

3. Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization;Journal of Crystal Growth;2019-02

4. High-power quantum-dot tapered tunable external-cavity lasers based on chirped and unchirped structures;Optics Express;2014-09-12

5. Optically Pumped Midinfrared Laser With Simultaneous Dual-Wavelength Emission;IEEE Photonics Technology Letters;2008-09

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