Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization-Reference-Cited by-同舟云学术

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Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization

Published:2019-02 Issue: Volume:507 Page:118-123
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Becerra Daniel L.,Cohen Daniel A.,Mehari Shlomo,DenBaars Steven P.,Nakamura Shuji

Funder

National Science Foundation

Solid State Lighting and Energy Electronics Center

Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference29 articles.

1. GaInN laser diodes from 440 to 530nm: a performance study on single-mode and multi-mode designs;Strauss;Proc. SPIE,2017

2. Recent Improvement in nitride lasers;Masui;Proc. SPIE,2017

3. Optical-loss suppressed InGaN laser diodes using undoped thick waveguide structure;Kawaguchi;Proc. SPIE,2016

4. Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation;Hurni;Appl. Phys. Lett.,2015

5. Efficient high-power laser diodes;Crump;IEEE J. Sel. Top. Quantum Electron.,2013

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