Aging Statistics Based on Trapping/Detrapping: Compact Modeling and Silicon Validation-Reference-Cited by-同舟云学术

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Aging Statistics Based on Trapping/Detrapping: Compact Modeling and Silicon Validation

Published:2014-06 Issue:2 Volume:14 Page:607-615
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Funder

DARPA¿Integrity and Reliability of Integrated Circuits Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/7298/6824879/06747313.pdf?arnumber=6747313

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2. Investigation of the Off-State Degradation in Advanced FinFET Technology—Part II: Compact Aging Model and Impact on Circuits;IEEE Transactions on Electron Devices;2023-03

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4. Measurement of BTI-induced Threshold Voltage Shift for Power MOSFETs under Switching Operation;2020 IEEE 29th Asian Test Symposium (ATS);2020-11-23

5. A reliable PUF in a dual function SRAM;Integration;2019-09

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