Carbon Ion Irradiation Damage Effects on Electrical Characteristics of Silicon PNP Power BJTs-Reference-Cited by-同舟云学术

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Carbon Ion Irradiation Damage Effects on Electrical Characteristics of Silicon PNP Power BJTs

Published:2015-03 Issue:1 Volume:15 Page:101-108
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Krishnakumar K. S.,Dinesh C. M.,Madhu K. V.,Ramani ,Damle Ramakrishna,Radhakrishna M. C.,Khan Saif Ahmad,Kanjilal Dinakar

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/7298/7054614/07038167.pdf?arnumber=7038167

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron Beam Induced Degradation in Electrical Characteristics of Optocoupler;IEEE Transactions on Device and Materials Reliability;2020-12

2. Swift heavy ions-induced degradation on the electrical characteristics of silicon NPN power transistors;Radiation Effects and Defects in Solids;2019-09-20

3. Damage Separation in a Bipolar Junction Transistor Following Irradiation With 250-MeV Protons;IEEE Transactions on Nuclear Science;2019-05

4. Radiation hardness studies on silicon Npn bipolar transistors irradiated with 120 MeV nickel ion;ADVANCES IN BASIC SCIENCE (ICABS 2019);2019

5. An Analysis of 30 MeV Proton Irradiation and Annealing Effects on Silicon NPN Power Transistors;Iranian Journal of Science and Technology, Transactions A: Science;2018-06-20

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