0.2-μm p/sup +/-n junction characteristics dependent on implantation and annealing processes
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx4/55/15997/00740659.pdf?arnumber=740659
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study of ultra-shallow p+n junctions formed by excimer laser annealing;Materials Chemistry and Physics;2010-09
2. The influence of the annealing sequence on p+/n junctions observed by scanning capacitance microscopy;Applied Physics Letters;2004-06-07
3. Two-step rapid thermal annealing (TS-RTA) to suppress out-diffusion of dopants without degrading short channel effect of transistor;IEEE Electron Device Letters;2000-08
4. Shallow p/sup +/n junctions formed by using a two-step annealing scheme with low thermal budget;IEEE Electron Device Letters;1999-12
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