A Wide-Band GaN Power Amplifier with Negative Feedback
Author:
Affiliation:
1. The 13th Research Institute China Electronics Technology Group,Shijiazhuang,China
2. Bowei Integrated Circuits Company Ltd,Circuit and System Department,Shijiazhuang,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10335093/10334965/10335136.pdf?arnumber=10335136
Reference14 articles.
1. A DC to 22GHz, 2W high power distributed amplifier using stacked FET topology with gate periphery tapering
2. A 6–18-GHz GaN Reactively Matched Distributed Power Amplifier Using Simplified Bias Network and Reduced Thermal Coupling
3. A 6–18 GHz 40 W Reactively Matched GaN MMIC Power Amplifier
4. Wideband GaAs MMIC driver power amplifiers for X and Ku bands
5. Wide bandwidth inverse class F power amplifier with novel balun harmonic matching network
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1. Broadband GaN-Based Power Amplifier MMIC for V-Band With Saturated Output Power Over 2 W;IEEE Microwave and Wireless Technology Letters;2024-05
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