Experimental Assessment of Variability in Junctionless Nanowire nMOS Transistors-Reference-Cited by-同舟云学术

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Experimental Assessment of Variability in Junctionless Nanowire nMOS Transistors

Published:2021-09-13 Issue: Volume: Page:
ISSN:
Container-title:ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC)
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Author:

De Souza Michelly,Barraud Sylvain,Casse Mikael,Vinet Maud,Faynor Olivier,Pavanello Marcelo Antonio

Funder

CNPq

FAPESP

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9631379/9631380/09631827.pdf?arnumber=9631827

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extraction of Drain Current Variability Components in Junctionless Nanowire Transistors;2023 International Conference on Noise and Fluctuations (ICNF);2023-10-17

2. Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors;Solid-State Electronics;2023-10

3. Analysis of Variability in Transconductance and Mobility of Nanowire Transistors;2022 36th Symposium on Microelectronics Technology (SBMICRO);2022-08-22

4. Variability Modeling in Triple-Gate Junctionless Nanowire Transistors;IEEE Transactions on Electron Devices;2022-08

5. Pragmatic evaluation of fin height and fin width combined variation impact on the performance of junctionless transistors;Journal of Computational Electronics;2022-04-02

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