Novel Normally-Off AlGaN/GaN-on-Si MIS-HEMT Exploiting Nanoholes Gate Structure
Author:
Affiliation:
1. Neue Halbleiter Devices, Institut für Mikroelektronik Stuttgart (IMS CHIPS),Stuttgart,Germany
2. Institute of Robust Power Semiconductor Systems (ILH), Universität Stuttgart,Stuttgart,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9947060/9947094/09947137.pdf?arnumber=9947137
Reference13 articles.
1. Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model
2. High-Performance Normally-OFF AlGaN/GaN Fin-MISHEMT on Silicon With Low Work Function Metal-Source Contact Ledge
3. Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm2 Specific On-Resistance for Power Device Applications
4. p-GaN Gate Enhancement-Mode HEMT Through a High Tolerance Self-Terminated Etching Process
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1. PECVD SiNx passivation with more than 8 MV/cm breakdown strength for GaN-on-Si wafer stress management;Power Electronic Devices and Components;2023-03
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