Model Order Reduction for Quantum Transport Simulation of Band-To-Band Tunneling Devices-Reference-Cited by-同舟云学术

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Model Order Reduction for Quantum Transport Simulation of Band-To-Band Tunneling Devices

Published:2014-02 Issue:2 Volume:61 Page:561-568
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Huang Jun Z.,Zhang Lining,Chew Weng Cho,Yam Chi-Yung,Jiang Li Jun,Chen Guan-Hua,Chan Mansun

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6717047/06704314.pdf?arnumber=6704314

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tight-Binding Models, Their Applications to Device Modeling, and Deployment to a Global Community;Springer Handbook of Semiconductor Devices;2022-11-11

2. Piezoelectric Tunnel FET With a Steep Slope;IEEE Electron Device Letters;2020-06

3. Impact of Source to Drain Tunneling on the Ballistic Performance of Si, Ge, GaSb, and GeSn Nanowire p-MOSFETs;IEEE Journal of the Electron Devices Society;2020

4. Robust mode space approach for atomistic modeling of realistically large nanowire transistors;Journal of Applied Physics;2018-01-28

5. Simulation and comparative study of tunneling field effect transistors with dopant-segregated Schottky source/drain;Japanese Journal of Applied Physics;2016-03-11

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