Impact of Source to Drain Tunneling on the Ballistic Performance of Si, Ge, GaSb, and GeSn Nanowire p-MOSFETs-Reference-Cited by-同舟云学术

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Impact of Source to Drain Tunneling on the Ballistic Performance of Si, Ge, GaSb, and GeSn Nanowire p-MOSFETs

Published:2020 Issue: Volume:8 Page:308-315
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Yadav Dibakar^ORCID,Nair Deleep R.^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/8949832/09035398.pdf?arnumber=9035398

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Donor-induced electrically charged defect levels: examining the role of indium and n-type defect-complexes in germanium;Journal of Computational Electronics;2024-06-18

2. Source-to-drain Tunneling Analysis in p-type Si and Ge Based NWTs/NSTs;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27

3. A Novel High-Performance CMOS VCRO Based on Electrically Doped Nanowire FETs in 10 nm Node;Silicon;2023-08-12

4. A deterministic Wigner transport equation solver with infinite correlation length;Journal of Computational Electronics;2023-07-11

5. A Deterministic Wigner Transport Equation Solver with Infinite Correlation Length;2023-05-05

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