A Novel High-Performance CMOS VCRO Based on Electrically Doped Nanowire FETs in 10 nm Node
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-023-02612-2.pdf
Reference40 articles.
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2. Razavi B (2019) The ring oscillator. IEEE Solid-State Circuits Mag 11(4):10–81
3. Sedigh Ziabari SA, Mahfuzul Aziz S, Mahdavi M. CMOS ring oscillators based on doping‑modified nanowire FETs: A novel design strategy. Silicon, published online June 2022. https://doi.org/10.1007/s12633-022-01979-y
4. Seifollahi S, SedighZiabari SA, Kiani-Sarkaleh A (2021) A design of nanoscale double-gate FET based ring oscillator with improved oscillation frequency using device engineering. Int J Electron Commun 134:153701
5. Zheng Z, Song W, Zhang L, Yang S, Wei J, Chen KJ (2021) Monolithically integrated GaN ring oscillator based on high-performance complementary logic inverters. IEEE Electron Device Lett 42(1)
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1. Performance Evaluation of Nano-scale Core–Shell Junctionless FETs in the Designing of Ultralow-Power Inverter and Ring Oscillator;Journal of Electronic Materials;2024-04-28
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