Performance of Deep-Depletion Buried-Channel $n$-MOSFETs for CMOS Image Sensors-Reference-Cited by-同舟云学术

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Performance of Deep-Depletion Buried-Channel $n$-MOSFETs for CMOS Image Sensors

Published:2013-12 Issue:12 Volume:60 Page:4173-4179
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Stefanov Konstantin D.,Zhang Zhige,Damerell Chris,Burt David,Kar-Roy Arjun

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6665013/06632904.pdf?arnumber=6632904

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New Tunneling Source Follower with Low 1/f Noise and High Voltage Gain;2024-04-08

2. Simulation of low frequency noise in buried-channel MOSFET by a Green’s function-based numerical trap level model;Solid-State Electronics;2022-06

3. 1/${f}^{\gamma}$ Low Frequency Noise Model for Buried Channel MOSFET;IEEE Journal of the Electron Devices Society;2020

4. Frequency jumps in single chip microwave LC oscillators;Applied Physics Letters;2014-12-15

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