Characteristics of AlGaN/GaN HEMTs With Various Field-Plate and Gate-to-Drain Extensions-Reference-Cited by-同舟云学术

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Characteristics of AlGaN/GaN HEMTs With Various Field-Plate and Gate-to-Drain Extensions

Published:2013-11 Issue:11 Volume:60 Page:3877-3882
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hsien-Chin Chiu ,Chih-Wei Yang ,Hsiang-Chun Wang ,Fan-Hsiu Huang ,Hsuan-Ling Kao ,Feng-Tso Chien

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6637023/06609049.pdf?arnumber=6609049

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A computational analysis of the impact of thin undoped channels in surface-related current collapse of AlGaN/GaN HEMTs;Semiconductor Science and Technology;2024-08-20

2. Novel double deck gate field plate structure on a normally-off AlGaN/GaN HEMT- An extensive analysis;Micro and Nanostructures;2024-08

3. HV-CV Analysis Trapping Behavior in 650V pGaN HEMT with Field Plates for High-Voltage Power Applications;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

4. Constructing drain surrounded double gate structure in AlGaN/GaN HEMT for boosting breakdown voltage;RSC Advances;2024

5. Terminal charges and capacitances;GaN Transistor Modeling for RF and Power Electronics;2024

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