Design of U-Shape Channel Tunnel FETs With SiGe Source Regions-Reference-Cited by-同舟云学术

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Design of U-Shape Channel Tunnel FETs With SiGe Source Regions

Published:2014-01 Issue:1 Volume:61 Page:193-197
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Wei,Wang Peng-Fei,Zhang Chun-Min,Lin Xi,Liu Xiao-Yong,Sun Qing-Qing,Zhou Peng,Zhang David Wei

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6690233/06670770.pdf?arnumber=6670770

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2. Novel III-V inverted T-channel TFET with dual-gate impact on line tunneling, with and without negative capacitance;Microelectronics Journal;2024-09

3. Design and application of germanium based complementary TFET devices with step tunneling paths;Microelectronics Journal;2024-08

4. Raised Ge-Source with n+ pocket and recessed drain line TFET: A proposal for biosensing applications;Materials Science and Engineering: B;2024-08

5. Investigation of Reliability Issues in a hybrid Extended Dual Source Double Gate Tunnel FET;IETE Journal of Research;2024-07-11

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